IndiumV3, Main, Repository, bibRecord, 000C36

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

Identifieur interne : 000C36 ( Main/Repository ); précédent : 000C35; suivant : 000C37

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

Auteurs : RBID : Pascal:13-0201236

Descripteurs français

Pascal (Inist)
- Mécanisme croissance, Méthode MOVPE, Epitaxie phase vapeur, Bore, Semiconducteur III-V, Condition opératoire, Indium, Cellule solaire, Laser semiconducteur, Borure, In, 8110A, 8115K, 8460J.

English descriptors

KwdEn :
- Borides, Boron, Growth mechanism, III-V semiconductors, Indium, MOVPE method, Operating conditions, Semiconductor lasers, Solar cells, VPE.

Abstract

The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal-organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated. A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 °C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality. A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized. The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers.

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Pascal:13-0201236

Le document en format XML

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<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0201236 INIST</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Borides</term>
<term>Boron</term>
<term>Growth mechanism</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>MOVPE method</term>
<term>Operating conditions</term>
<term>Semiconductor lasers</term>
<term>Solar cells</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Bore</term>
<term>Semiconducteur III-V</term>
<term>Condition opératoire</term>
<term>Indium</term>
<term>Cellule solaire</term>
<term>Laser semiconducteur</term>
<term>Borure</term>
<term>In</term>
<term>8110A</term>
<term>8115K</term>
<term>8460J</term>
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<front><div type="abstract" xml:lang="en">The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal-organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated. A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 °C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality. A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized. The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers.</div>
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<fC01 i1="01" l="ENG"><s0>The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal-organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated. A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 °C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality. A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized. The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers.</s0>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>16</s2>
<s3>Busan KOR</s3>
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Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

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